On 17 March 2022, we published two first-person accounts from Ukrainian IEEE members Hanna Porieva and Volodymyr Pyliavskyi as well as a Q&A with IEEE Siberian Section member Roman L. Gorbunov. Our main intention with this collection, which we titled “Stories from the War in Ukraine,” was to alert IEEE members around the world about the plight of their Ukrainian peers trying to survive the Russian invasion.

We decided to include the interview with Gorbunov to give readers insight into the thinking of a professional engineer living under a regime that controls its population through propaganda, disinformation, and coercion. Many readers, though, did not see things that way. Several wrote to say that they interpreted our decision to publish as tacit support for the views expressed or willful propagation of misinformation. That’s understandable: We apologize for not providing adequate context at the time of publication.

Our initial response to the first comments was to add an editor’s note at the top of Gorbunov’s piece pointing out that his views are at odds with international reporting on the war. We also directed readers to a source for reliable civilian casualty statistics.

Many readers were coming to the piece through social media and never realized that we had also published Porieva’s and Pyliavskyi’s accounts. So in addition to publishing this post to clarify our intentions and to apologize to readers, we encourage you to engage with the stories Porieva and Pyliavskyi worked so hard under perilous circumstances to provide to us and to you.

We encourage our readers to continue to follow our coverage of events in Ukraine. IEEE Spectrum and the Institute remain focused on publishing important and insightful news and analysis and we are committed to continuing to improve the way we report these stories by providing context and background to better inform and engage our readers.

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3D-Stacked CMOS Takes Moore’s Law to New Heights

When transistors can’t get any smaller, the only direction is up

10 min read
An image of stacked squares with yellow flat bars through them.
Emily Cooper

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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