Nanowires Grow Better on Graphene
In an attempt to grow nanowires on a graphene substrate, researchers at the University of Illinois may have stumbled upon a new paradigm for epitaxy (the growth of crystals on a susbstrate).
Some believe that developing new manufacturing methods for nanoscale devices—like epitaxy—may be more crucial to meeting the demands of next generation chips than creating new materials, especially when feature sizes start falling below three nanometers. So, the Illinois researchers' development of a new method of epitaxy may ultimately be more significant than creating a new material.
The research, which was published in the journal Nano Letters (“InxGa1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation”), produced nanowires made from III-V compound semiconductors. Generally, III-V semiconductors like gallium arsenide don't integrate well with silicon, but recently it was discovered that when these materials were brought down to the nanoscale that they were compatible.
Researchers have previously combined two of these semiconductors in gaseous form so that they deposit themselves on a graphene substrate (a process known as metalorganic chemical vapor deposition, or MOCVD) and self assemble into ordered crystalline form. However, the Illinois research marks the first time three of the semiconductors have been mixed together in this way.