Salmon DNA Embedded with Nanoparticles Leads to a Novel Memory Device

The technique could lead to new designs for optical storage devices

2 min read
Salmon DNA Embedded with Nanoparticles Leads to a Novel Memory Device

Researchers from Germany and Taiwan have combined expertise to create a “write-once-read-many-times” (WORM) memory device made from embedding silver nanoparticles into a biopolymer film of salmon DNA.

The collaboration began a little over a year ago. Researchers from the DFG-Center for Functional Nanostructures (CFN) at the Karlsruhe Institute of Technology (KIT) in Germany, led by Dr. Ljiljana Fruk, had been working on producing nanoparticles through DNA templates, which has been a fertile area of research of late. Meanwhile, the team at the National Tsing Hua University, led by Dr. Yu-Chueh Hung, worked on optimizing the process and actually designed the memory device.

The device they came up with is a DNA-based biopolymer nanocomposite that is sandwiched between two electrodes. When UV light shines on it, the silver atoms group into nano-sized particles. By creating these particles, the researchers were able to encode data. This device is able to store data through the phenomenon known as bistability, in which a device exhibits two states of different conductivities at the same applied voltage.

The DNA-based biopolymer nanocomposite was used because of its affinity with metal ions and its effectiveness as a template for metal polymer nanoparticle systems.

The memory device is fully described in the journal Applied Physics Letters under the title “Photoinduced write-once read-many-times memory device based on DNA biopolymer nanocomposite”,.

In working with the device, the Taiwanese researchers soon discovered that once it had been turned on it would stay turned on, and that variations in voltage across the electrodes did not alter the device’s conductivity. In other words, once information is written onto the device it cannot be written over, and the information appears to persist indefinitely.

The researchers have indicated that the technique for making the device could provide new design techniques for making optical storage devices, as wall as having applications in plasmonics.

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Emily Cooper

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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