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Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever

Phototransistor has a wide range of applications, including digital cameras and smoke detectors

1 min read
Researchers Develop Fastest and Most Flexible Silicon Phototransistor Ever
Photo: Jung-Hun Seo/University of Wisconsin-Madison

Researchers at the University of Wisconsin-Madison (UW-Madison) have developed a flexible phototransistor based on single-crystalline silicon nanomembranes (Si NM). They claim that this phototransistor is the fastest and most flexible one ever produced. 

The flexible phototransistor could be incorporated into a wide range of applications. In a digital camera, for example, it could result in a thinner lens that would capture images faster and yield higher quality still photos and videos.

In research published in the journal Advanced Optical Materials, the silicon nanomembrane is used as the top layer of the phototransistor; it enables full exposure of the active region of the device to any light. The researchers used a technique known as  “flip-transfer” in which they essentially flip the nanomembrane onto a reflective metal layer.

This arrangement allowed the researchers to boost the light absorption capabilities of the phototransistor without the need of an external amplifier. They simply placed electrodes under the nanomembrane layer; both the electrodes and the metal layer serve as reflectors.

“In this structure—unlike other photodetectors—light absorption in an ultrathin silicon layer can be much more efficient because light is not blocked by any metal layers or other materials,” said Zhenqiang “Jack” Ma, a professor at UW-Madison, in a press release.

It is the combination of the device’s high sensitivity and flexibility that are unique in a phototransistor.

“This demonstration shows great potential in high-performance and flexible photodetection systems,” said Ma, in the press release. “It shows the capabilities of high-sensitivity photodetection and stable performance under bending conditions, which have never been achieved at the same time.”

The upshot, say the researchers is that the flexibility allows the photodetector to better mimic mammalian vision by curving to fit the  shape of the camera’s optical system. “Currently, there's no easy way to do that,” says Ma.

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3D-Stacked CMOS Takes Moore’s Law to New Heights

When transistors can’t get any smaller, the only direction is up

10 min read
An image of stacked squares with yellow flat bars through them.
Emily Cooper

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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