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Piezoelectrics and Thin Films Power Your Mobile With a Press of Your Finger

A combination of piezoelectric materials and thin films could bring pressure-powered devices to market

1 min read
Piezoelectrics and Thin Films Power Your Mobile With a Press of Your Finger

While the pedantic among us may quibble with phrases like “self-powering portable electronics” and start blathering about the second law of thermodynamics, new research from Australia is pushing the limits of piezoelectric materials for turning pressure into electrical energy for mobile devices.

The researchers have published their work in the journal Advanced Functional Materials after demonstrating a method for combining piezoelectric materials with thin-film technology to produce more easily integrated into mass-production techniques.

"The concept of energy harvesting using piezoelectric nanomaterials has been demonstrated, but the realization of these structures can be complex, and they are poorly suited to mass fabrication,” says Dr. Madhu Bhaskaran, lead coauthor of the research. "Our study focused on thin-film coatings because we believe they hold the only practical possibility of integrating piezoelectrics into existing electronic technology."

When more easily integrated piezoelectric materials are combined with groundbreaking work in reducing the amount of energy consumed by electronic devices like that done by Eric Pop and his team at the University of Illinois at Urbana-Champaign’s Beckman Institute for Advanced Science and Technology, it seems possible that we may be able to run our small electronic devices for longer than a few hours before we have to plug them into an outlet. 

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The First Million-Transistor Chip: the Engineers’ Story

Intel’s i860 RISC chip was a graphics powerhouse

21 min read
Twenty people crowd into a cubicle, the man in the center seated holding a silicon wafer full of chips

Intel's million-transistor chip development team

In San Francisco on Feb. 27, 1989, Intel Corp., Santa Clara, Calif., startled the world of high technology by presenting the first ever 1-million-transistor microprocessor, which was also the company’s first such chip to use a reduced instruction set.

The number of transistors alone marks a huge leap upward: Intel’s previous microprocessor, the 80386, has only 275,000 of them. But this long-deferred move into the booming market in reduced-instruction-set computing (RISC) was more of a shock, in part because it broke with Intel’s tradition of compatibility with earlier processors—and not least because after three well-guarded years in development the chip came as a complete surprise. Now designated the i860, it entered development in 1986 about the same time as the 80486, the yet-to-be-introduced successor to Intel’s highly regarded 80286 and 80386. The two chips have about the same area and use the same 1-micrometer CMOS technology then under development at the company’s systems production and manufacturing plant in Hillsboro, Ore. But with the i860, then code-named the N10, the company planned a revolution.

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