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Piezoelectrics and Thin Films Power Your Mobile With a Press of Your Finger

A combination of piezoelectric materials and thin films could bring pressure-powered devices to market

1 min read
Piezoelectrics and Thin Films Power Your Mobile With a Press of Your Finger

While the pedantic among us may quibble with phrases like “self-powering portable electronics” and start blathering about the second law of thermodynamics, new research from Australia is pushing the limits of piezoelectric materials for turning pressure into electrical energy for mobile devices.

The researchers have published their work in the journal Advanced Functional Materials after demonstrating a method for combining piezoelectric materials with thin-film technology to produce more easily integrated into mass-production techniques.

"The concept of energy harvesting using piezoelectric nanomaterials has been demonstrated, but the realization of these structures can be complex, and they are poorly suited to mass fabrication,” says Dr. Madhu Bhaskaran, lead coauthor of the research. "Our study focused on thin-film coatings because we believe they hold the only practical possibility of integrating piezoelectrics into existing electronic technology."

When more easily integrated piezoelectric materials are combined with groundbreaking work in reducing the amount of energy consumed by electronic devices like that done by Eric Pop and his team at the University of Illinois at Urbana-Champaign’s Beckman Institute for Advanced Science and Technology, it seems possible that we may be able to run our small electronic devices for longer than a few hours before we have to plug them into an outlet. 

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3D-Stacked CMOS Takes Moore’s Law to New Heights

When transistors can’t get any smaller, the only direction is up

10 min read
An image of stacked squares with yellow flat bars through them.
Emily Cooper
Green

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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