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New Graphene Filled Epoxy Designed for High Thermal Conductivity

EP30NG is a graphene filled epoxy system used for bonding and sealing applications that require high thermal conductivity

1 min read
Graphene Filled Epoxy

Master Bond EP30NG is a two component epoxy adhesive system developed for applications that require high thermal conductivity. It contains a specialty graphene filler which contributes not only to its high compressive strength, but also to its enhanced dimensional stability. EP30NG achieves an extraordinary thermal conductivity of 38.15 BTU•in/(ft2•hr•°F) [5.5 W/(m•K)] at room temperature while its compressive strength measures 22,000-24,000 psi upon cure. It has a low coefficient of thermal expansion of 24-26 x 10-6 in/in/°C and exhibits a Shore D hardness of 85-95.

According to Rohit Ramnath, Senior Product Engineer, “EP30NG is ideal for bonding applications where some contact pressure can be applied. The minimum bond line thickness is 0.18 mm, since graphene nanoparticles tend to agglomerate to form larger particles." This epoxy system is formulated to cure at room temperature or more rapidly at elevated temperatures. Part A has a thick paste consistency and Part B is a low viscosity liquid. The viscosity of the mixed compound is a thick paste.

EP30NG bonds well to a variety of substrates including metals, composites, ceramics, glass and many plastics. The service temperature range is -60°F to +300°F. The product is available in 30 cc jar kits, 1/2 pint kits, and pint kits.

Download the complete case studies and learn how this epoxy might benefit your application.

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The Transistor at 75

The past, present, and future of the modern world’s most important invention

2 min read
A photo of a birthday cake with 75 written on it.
Lisa Sheehan
LightGreen

Seventy-five years is a long time. It’s so long that most of us don’t remember a time before the transistor, and long enough for many engineers to have devoted entire careers to its use and development. In honor of this most important of technological achievements, this issue’s package of articles explores the transistor’s historical journey and potential future.

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