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UCLA Builds Fastest Graphene Transistor Yet

Operation at terahertz frequencies is in sight

3 min read

1 September 2010—Graphene promises to be the basis for future circuits that can operate far faster than silicon chips, but first researchers have to devise the best way to build them. The latest contender comes from the University of California, Los Angeles, where scientists and engineers have used a nanowire to build a transistor based on graphene.

The resulting field-effect transistor switches at the highest speed reported so far: 300 gigahertz in a device with a channel length (the distance between the source and the drain) of 140 nanometers. That’s roughly twice as fast as the best silicon metal-oxide-semiconductor field-effect transistor of similar proportions and comparable to transistors made of indium phosphide or gallium arsenide, which are expensive compound semiconductors.

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The Transistor at 75

The past, present, and future of the modern world’s most important invention

2 min read
A photo of a birthday cake with 75 written on it.
Lisa Sheehan
LightGreen

Seventy-five years is a long time. It’s so long that most of us don’t remember a time before the transistor, and long enough for many engineers to have devoted entire careers to its use and development. In honor of this most important of technological achievements, this issue’s package of articles explores the transistor’s historical journey and potential future.

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