IBM Makes 3-Nanometer Nanowire Silicon Circuits

Researchers report a ring oscillator based on silicon nanowires

3 min read

15 June 2010—A test circuit built with nanowires of silicon could point the way to much smaller transistors, say the IBM researchers who created it.

Researchers from IBM’s Thomas J. Watson Research Center announced today at the annual Symposium on VLSI Technology, in Honolulu, that they have built a ring oscillator out of field-effect transistors (FETs) based on nanowires with diameters as small as 3 nanometers. The oscillator—is composed of 25 inverters using negative- and positive-channel FETs.

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The State of the Transistor in 3 Charts

In 75 years, it’s become tiny, mighty, ubiquitous, and just plain weird

3 min read
A photo of 3 different transistors.

The most obvious change in transistor technology in the last 75 years has been just how many we can make. Reducing the size of the device has been a titanic effort and a fantastically successful one, as these charts show. But size isn’t the only feature engineers have been improving.

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