Internal Combustion Used to Make Thin-Film Transistors

Combustible mix of metal and oxygen could be path to flexible electronics

3 min read

18 April 2011—A team of scientists has developed chemical solutions that use their own internal heat to fuse metal and oxygen atoms and form semiconducting films at low temperatures. This method could pave the way for cheaper next-generation thin-film and flexible electronics. The work, which describes the results for films of several different compositions, appeared on Sunday in the journal Nature Materials.

The thin-film electronics behind today’s flat-panel displays are made of chaotically structured, or amorphous, silicon. But amorphous silicon is reaching its performance limits, and a new class of materials—amorphous oxides— will soon be making its commercial debut. Electrons in amorphous oxides can zoom through the material dozens of times as fast as they do in amorphous silicon, making for faster electronics. And unlike amorphous silicon, oxides carry current the same way in every direction, making them better candidates for bendable electronics  like flexible solar arrays and roll-up displays.

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3D-Stacked CMOS Takes Moore’s Law to New Heights

When transistors can’t get any smaller, the only direction is up

10 min read
An image of stacked squares with yellow flat bars through them.
Emily Cooper
Green

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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