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Are Multiferroics the Ultimate Replacement for Flash Memory?

A new complex oxide "multiferroic" material joins magnetic and ferroelectric properties in one crystal

2 min read
Are Multiferroics the Ultimate Replacement for Flash Memory?
Image: The City College of New York

Researchers at The City College of New York with collaborators from Drexel, Columbia, Brookhaven National Laboratory, and China’s South University of Science and Technology, have developed a new kind of material, called a complex oxide, that one researcher described as potentially leading to the “ultimate replacement for flash memory”.

The work, which was published in the Nature online journal Scientific Reports, involved the development of a single material that combines both magnetic and ferroelectric properties—a multiferroic. By joining these two properties it becomes possible to control charges using magnetic fields and spins simply by applying a voltage. This could lead to new designs in both logic circuits and spintronics, the materials' discoverers claim.

A few years back, research out of Tyndall National Institute in Ireland suggested that it could be possible to use atomic layer deposition to lay down rare earth oxides and create “a one terabyte USB stick in the near future.”

This latest research appears to further the prospects of that outcome by developing a process to build the new complex oxides using common elements: barium, titanium, and manganese. The novel material belongs to the Hollandite crystal group, which is a mineral composed of manganate of barium and manganese. 

For nearly two decades, scientists have predicted that inorganic substances like this had a ferroelectric nature, and this work has confirmed that prediction.

“The Holy Grail in this field is the combination of both magnetic and ferroelectric elements at room temperature with a sufficient magnitude of interaction,” said Stephen O’Brien, associate professor of chemistry at The City College, in a press release. He added that the material could be the “ultimate replacement for flash memory” or smaller devices with massive storage capacities.

O’Brien is apparently not alone in his optimism for this material, with the noted “father of integrated ferroelectrics,” J.F. Scott of the University of Cambridge, making it known that he believes that multiferroics might hold the future for the ultimate memory device.

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3 Ways 3D Chip Tech Is Upending Computing

AMD, Graphcore, and Intel show why the industry’s leading edge is going vertical

8 min read
Vertical
A stack of 3 images.  One of a chip, another is a group of chips and a single grey chip.
Intel; Graphcore; AMD
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A crop of high-performance processors is showing that the new direction for continuing Moore’s Law is all about up. Each generation of processor needs to perform better than the last, and, at its most basic, that means integrating more logic onto the silicon. But there are two problems: One is that our ability to shrink transistors and the logic and memory blocks they make up is slowing down. The other is that chips have reached their size limits. Photolithography tools can pattern only an area of about 850 square millimeters, which is about the size of a top-of-the-line Nvidia GPU.

For a few years now, developers of systems-on-chips have begun to break up their ever-larger designs into smaller chiplets and link them together inside the same package to effectively increase the silicon area, among other advantages. In CPUs, these links have mostly been so-called 2.5D, where the chiplets are set beside each other and connected using short, dense interconnects. Momentum for this type of integration will likely only grow now that most of the major manufacturers have agreed on a 2.5D chiplet-to-chiplet communications standard.

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