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Alternative Memories Get the Carbon Nanotube Test

RRAM and phase-change memory--two alternatives to flash--have been constructed using carbon nanotube electrodes

3 min read
Alternative Memories Get the Carbon Nanotube Test

nanotube memory fig. 1

Image: Jiale Liang
Simulation of the high temperature region above a carbon nanotube electrode used in phase change memory

27 June 2011—A team of scientists at Stanford University has used carbon nanotubes to create nanoscale versions of two next-generation memory technologies. The results help demonstrate that alternatives to flash memory will perform well even when scaled down below 10 nanometers in size—a range where silicon memories won’t function.

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The Transistor at 75

The past, present, and future of the modern world’s most important invention

2 min read
A photo of a birthday cake with 75 written on it.
Lisa Sheehan

Seventy-five years is a long time. It’s so long that most of us don’t remember a time before the transistor, and long enough for many engineers to have devoted entire careers to its use and development. In honor of this most important of technological achievements, this issue’s package of articles explores the transistor’s historical journey and potential future.

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