A Simple Filter Turns Blue OLED Light Into White

This clever approach could lead to more efficient organic light-emitting diodes for TVs and smartphone screens

2 min read
Side-by-side image of blue light to white
A blue-emitting OLED is shown before (left) and after (right) a distributed Bragg reflector was added to produce white light. The reflector transforms blue light into white light of two color temperatures, as shown on the right.
Photo: Konstantinos Daskalakis

Organic light-emitting diodes (OLEDs) have come a long way since the first working device was reported three decades ago. Prized for their dark blacks, crisp image reproduction, and power efficiency, today's OLEDs dominate the screens of Android phones and LG televisions. They may take over iPhones as early as next year.

And because OLEDs are cheap and easy to make, we ought to also use them to make white light for general illumination, says Konstantinos Daskalakis, a post-doctoral researcher at Aalto University in Finland.

Except white is an OLED’s Achilles' heel. Typically, to get white light, individual red, green, and blue emitters shine at the same time. This makes white the most power-hungry color, reportedly requiring six times as much power as it takes to produce the color black on a Google Pixel. Other strategies to generate white light include carefully doping emitting layers with chemicals, but this approach makes it harder to fabricate devices.

In a proof-of-concept experiment, Daskalakis and his supervisor Paivi Torma converted conventional blue-emitting OLEDs to white-emitting ones simply by depositing a distributed Bragg reflector (DBR)—a stack of two alternating materials with high and low refractive indexes—on top of the OLEDs.

Image of setupThis blue-emitting OLED has a distributed Bragg reflector deposited on top.Photo: Konstantinos Daskalakis

To make the devices, Daskalakis first prepared blue-emitting OLEDs with standard vacuum evaporation techniques. Then, he sputtered a DBR comprising of six alternating layers of silicon dioxide and tantalum oxide directly on top of each OLED. 

DBRs are usually used as reflective mirrors to create optical cavities in devices. Instead, Daskalakis and Torma decided to use a DBR as a converter, leveraging so-called Bragg modes that resonate within a DBR. The Bragg modes can be tuned by varying the thickness of the DBR's layers. Those modes are made to occur at red, green, and blue wavelengths, so as the OLED’s blue light passes through the DBR, some high-energy blue photons relax into lower-energy red and green photons, Daskalakis says. The mixture of red, green, and blue photons emerging from the device produces white light. 

With that approach, the light’s color temperature could be tuned by varying the structure of the DBR stack. In one device, the silicon dioxide layer was 43 nanometers (nm) thick and the tantalum oxide layer was 41 nm thick. That device produced a warm, daylight white color with the temperature 6007 K. Another device with 53-nm-thick silicon dioxide layers and 42-nm tantalum oxide layers generated a cool white light with a temperature of 4450 K.

Meanwhile, the device's quantum efficiency could be optimized separately by applying the reflector to different types of OLEDs. Compared to the plain blue OLED, the converted white OLEDs exhibited a 20 percent higher quantum efficiency. The converted white OLEDs also continued working after two months, whereas the plain blue OLEDs stopped working after the second day.

Torma hopes this work inspires other researchers to find more uses for DBRs. “They are kind of overlooked,” she says. Bragg modes in particular have been neglected: “They are kind of broad or lossy modes, and people often think that it’s better to have very narrow modes,” she says. “But we saw that these actually work very well for our purpose.”

The duo has filed for a patent and is working to further characterize and optimize the device’s design for potential applications in lighting and consumer electronics.

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3D-Stacked CMOS Takes Moore’s Law to New Heights

When transistors can’t get any smaller, the only direction is up

10 min read
An image of stacked squares with yellow flat bars through them.
Emily Cooper

Perhaps the most far-reaching technological achievement over the last 50 years has been the steady march toward ever smaller transistors, fitting them more tightly together, and reducing their power consumption. And yet, ever since the two of us started our careers at Intel more than 20 years ago, we’ve been hearing the alarms that the descent into the infinitesimal was about to end. Yet year after year, brilliant new innovations continue to propel the semiconductor industry further.

Along this journey, we engineers had to change the transistor’s architecture as we continued to scale down area and power consumption while boosting performance. The “planar” transistor designs that took us through the last half of the 20th century gave way to 3D fin-shaped devices by the first half of the 2010s. Now, these too have an end date in sight, with a new gate-all-around (GAA) structure rolling into production soon. But we have to look even further ahead because our ability to scale down even this new transistor architecture, which we call RibbonFET, has its limits.

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