A New Twist on Memristance

NIST researchers create flexible memory circuits that act like memristors

3 min read

10 June 2009—Researchers at the U.S. National Institute of Standards and Technology (NIST), in Gaithersburg, Md., report in the July 2009 issue of IEEE Electron Device Letters that they have created a low-power, inexpensive flexible memory that has the properties of a memristor. Memristors can be used to make brainlike circuits and nanoelectronic memories, because they ”remember” the amount of current that has flowed through them, and that memory is reflected in the device’s resistance.

Though these devices were first theorized in 1971, no one was able to make a practical memristor until Hewlett-Packard figured out how to do it in 2008. Producing a flexible form of memristor could make a fourth fundamental circuit element usable in implantable medical electronics where stiff, brittle silicon wouldn’t work, says Curt A. Richter, head of the Nanoelectronic Device Metrology Project at NIST’s Semiconductor Electronics Division.

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The Transistor of 2047: Expert Predictions

What will the device be like on its 100th anniversary?

4 min read
Six men and a woman smiling.

The luminaries who dared predict the future of the transistor for IEEE Spectrum include: [clockwise from left] Gabriel Loh, Sri Samavedam, Sayeef Salahuddin, Richard Schultz, Suman Datta, Tsu-Jae King Liu, and H.-S. Philip Wong.


The 100th anniversary of the invention of the transistor will happen in 2047. What will transistors be like then? Will they even be the critical computing element they are today? IEEE Spectrum asked experts from around the world for their predictions.

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