Researchers Discover New Structure Inside Nanowires
Nanowires made from III-V semiconductors like indium gallium arsenide are having a bit of run of late. Yesterday, I reported on a new method for growing them on graphene.
Now researchers at the University of Cincinnati have discovered that a newly developed architecture for semiconductor nanowires has a hidden nook in which to find electrons and holes. The discovery opens up a new understanding of the fundamental physics of nanowires.
The research, which was published in the journal Nano Letters (“Optical, Structural, and Numerical Investigations of GaAs/AlGaAs Core–Multishell Nanowire Quantum Well Tubes”), involved a host of characterization and measurement techniques.
University of Cincinnati physics professors Howard Jackson and Leigh Smith, who together led the research, believe that applications of this new structure could range from solar cells to environmental sensors.
“This kind of structure in the gallium arsenide/aluminum gallium arsenide system had not been achieved before,” Jackson said in a press release. “It’s new in terms of where you find the electrons and holes, and spatially it’s a new structure.”